METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to minimize process defects like a cone phenomenon or bridge phenomenon caused by particles of a polysilicon layer material, by consecutively dry-etching an anti-reflective layer, a silicide layer and a polysilicon layer in a dry-etching apparatus to form a pattern of a gate electrode. CONSTITUTION: A gate oxide layer is formed on a semiconductor substrate. A polysilicon layer and a silicide layer are sequentially formed on the gate oxide layer. An anti-reflective layer(ARL) is formed on the silicide layer. A photoresist layer pattern is formed on the ARL. The ARL, the silicide layer and the polysilicon layer are consecutively dry-etched in one etching apparatus to form a gate electrode pattern by using the photoresist layer pattern as a mask.