发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY DEVICE CAPABLE OF PREVENTING SILICIDATION OF LOWER ELECTRODE OF CAPACITOR ACCORDING TO SILICON PLASMA PROCESS OF TITANIUM NITRIDE DIFFUSION BARRIER L |
摘要 |
PURPOSE: A method for manufacturing a semiconductor memory device is provided to prevent silicidation of a lower electrode, by using silicon-containing gas to perform a plasma treatment regarding a TiN diffusion barrier layer so that the TiN diffusion barrier layer is changed to a Ti-Si-N layer, by performing a cleaning process by a mixed solution of NH4OH and H2O and by eliminating a remaining silicon layer on the Ti-Si-N layer. CONSTITUTION: An interlayer dielectric(35) covering a semiconductor substrate(30) having a completed transistor is selectively etched to form a contact hole exposing a source/drain junction region(34) of the transistor. A TiN diffusion barrier layer is formed on the resultant structure including the contact hole. A plasma process is performed regarding the TiN diffusion barrier layer by using silicon-containing source gas so that at least a part of the TiN diffusion barrier layer is changed to a Ti-Si-N layer. A wet-cleaning process is performed to eliminate a remaining silicon layer on the Ti-Si-N layer. A capacitor composed of a lower electrode(38), a dielectric layer(39) and an upper electrode(40) is formed on the Ti-Si-N layer.
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申请公布号 |
KR20020000407(A) |
申请公布日期 |
2002.01.05 |
申请号 |
KR20000035143 |
申请日期 |
2000.06.24 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
CHOI, HYEONG BOK;KIM, JEONG TAE |
分类号 |
H01L27/105;(IPC1-7):H01L27/105 |
主分类号 |
H01L27/105 |
代理机构 |
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地址 |
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