| 摘要 |
PURPOSE: A film thickness measuring method of member and processing method of the member are provided to accurately measure actual thickness of a processed layer on line in plasma processing, specially plasma etching processing. CONSTITUTION: A predetermined film thickness of the first processed material is set. Intensity of an interference beam for the second processed material with the same structure as the first material is individually measured on a plurality of wavelengths, and an actual pattern, which uses wavelength as a parameter, for a derivative value of the intensity of the measured interference beam is determined. The film thickness of the second processed material is determined based on the standard pattern and actual pattern of the derivative value. |
