| 摘要 |
PURPOSE: A method for manufacturing a high dielectric capacitor of a semiconductor device is provided to prevent impurity contamination and to guarantee an excellent leakage current characteristic, by forming a TiO2 dielectric layer at a low temperature by a Ti(NO3)4 precursor. CONSTITUTION: A predetermined region of an interlayer dielectric(20) formed on a semiconductor substrate(10) is etched to form a contact hole, and a contact plug(30) is formed inside the contact hole. A titanium silicide layer(40) is formed on the contact plug. A diffusion barrier layer(50) is formed on the titanium silicide layer to completely bury the contact hole. A cap oxide layer(60) is formed on the resultant structure including the diffusion barrier layer, and is etched until the diffusion barrier layer is exposed. A cylindrical storage electrode(70) is formed on the sidewall of the etched cap oxide layer and on the exposed diffusion barrier layer. A TiO2 dielectric layer(80) is evaporated and annealed on the resultant structure including the storage electrode by using a Ti(NO3)4 precursor and oxidation gas. A plate electrode(90) is formed on the resultant structure including the TiO2 dielectric layer.
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