METHOD FOR MANUFACTURING CAPACITOR

摘要

PURPOSE: A method for manufacturing a capacitor is provided to improve an electrical characteristic, by performing a plasma process regarding the surface of a ruthenium lower electrode, by eliminating impurities of a Ta2O5 dielectric layer and by controlling oxygen depletion. CONSTITUTION: A ruthenium lower electrode(20) is formed on a semiconductor substrate(10) on which various elements for forming a semiconductor device are formed. The ruthenium lower electrode is surface-processed. The first Ta2O5 layer(30a) is evaporated on the ruthenium lower electrode. The first Ta2O5 layer is surface-processed. The second Ta2O5 layer(30b) is formed on the first Ta2O5 layer to form a Ta2O5 dielectric layer(30). The Ta2O5 dielectric layer is annealed. An upper electrode(40) is formed on the Ta2O5 dielectric layer.