| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to increase reliability and to form a capacitor having high capacitance even in a device of 0.1 micrometer, by making a diffusion barrier layer no exposed even when misalignment happens, so that a high-temperature annealing process is enabled. CONSTITUTION: The first oxide layer(12) and a nitride layer(13) are formed on a semiconductor substrate(11) having a predetermined structure. A predetermined region of the nitride layer and the first oxide layer is etched to form a contact hole exposing a predetermined region of the semiconductor substrate. A polysilicon layer(14), an ohmic contact layer and a diffusion barrier layer(16) are sequentially formed not to bury the contact hole completely. A seed layer(17) and an aluminum oxide layer are formed on the resultant structure, and the aluminum oxide layer is blank-etched to form a spacer on the sidewall of the contact hole. A glue layer and the second oxide layer are sequentially formed on the resultant structure. A predetermined region of the second oxide layer and the glue layer is etched to form a dummy oxide layer pattern. After the aluminum oxide layer spacer is eliminated, a platinum layer(21) is formed on the dummy oxide layer pattern to form a storage electrode. The second oxide layer, the glue layer and the exposed seed layer are removed. After a high dielectric layer(22) is formed on the resultant structure, an upper electrode(23) is formed.
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