发明名称 Etching method, thin film transistor matrix substrate, and its manufacture
摘要 In a method of etching an Al or Al alloy layer, an Al or Al alloy layer is formed on an underlying surface, the surface of the Al or Al alloy layer is processed with TMAH, a resist pattern is formed on the surface of the Al or Al alloy layer processed with TMAH, and by using the resist pattern as an etching mask, the Al or Al alloy layer is wet-etched.
申请公布号 US6335290(B1) 申请公布日期 2002.01.01
申请号 US19990277791 申请日期 1999.03.29
申请人 FUJITSU LIMITED 发明人 ISHIDA YUKIMASA
分类号 G02F1/136;C23F1/20;G02F1/1368;H01L21/306;H01L21/3213;H01L21/336;H01L21/77;H01L21/84;H01L29/45;H01L29/786;(IPC1-7):H01L21/302;H01L21/00;B44C1/22 主分类号 G02F1/136
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