Method for fabricating a group III nitride semiconductor device

摘要

A group III nitride semiconductor device producing method is constructed by: a step of forming a first crystal layer made of a group III nitride semiconductor (AlxGa1-x)1-y.InyN (0<=x<=1, 0<=y<=1) doped with a group II impurity element; a step of a second crystal layer made of a group III nitride semiconductor AlzGa1-zN (0.7<=z<=1) onto the first crystal layer; and a step of removing at least a part of the second crystal layer by etching after the formation of the first and second crystal layers.