发明名称 Thin film capacitor having an improved bottom electrode and method of forming the same
摘要 The present invention provides a storage electrode of a capacitor, which includes a region in contact with a dielectric film of the capacitor, wherein at least the region is made of an amorphous electrically conductive oxide material.
申请公布号 US6335551(B2) 申请公布日期 2002.01.01
申请号 US20000741422 申请日期 2000.12.21
申请人 NEC CORPORATION 发明人 TAKEMURA KOICHI
分类号 H01L27/04;H01L21/02;H01L21/822;H01L21/8242;H01L27/108;H01L29/92;(IPC1-7):H01C27/108 主分类号 H01L27/04
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