| 摘要 |
The semiconductor device comprises a MOSFET including a pair of impurity diffused regions formed on both sides of a gate formed on a semiconductor substrate; an insulation film covering a top of the MOSFET and having a through-hole opened on one of the impurity diffused regions formed in; and a capacitor formed at least a part of an inside of the through-hole, the through-hole having a larger diameter inside than at a surface thereof or having a larger diameter at an intermediate part between the surface thereof and a bottom thereof than the surface and the bottom thereof.
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