发明名称 |
Plasma immersion ion processor for fabricating semiconductor integrated circuits |
摘要 |
An apparatus and method for fabricating a spherical shaped semiconductor integrated circuit according to which a chamber is provided into which spheres of a semiconductor material are introduced therein. Process gases are also selectively introduced into the chamber. The chamber includes a metallic portion that is selectively provided a voltage. Upon receiving the voltage, the chamber attracts ions from the process gases, at least some of the attracted ions treating the spheres according to a particular aspect of the fabrication process.
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申请公布号 |
US6335268(B1) |
申请公布日期 |
2002.01.01 |
申请号 |
US19990401753 |
申请日期 |
1999.09.23 |
申请人 |
BALL SEMICONDUCTOR, INC. |
发明人 |
MURZIN IVAN HERMAN;ZHANG YANWEI |
分类号 |
C23C14/48;C23C16/458;C23C16/507;C23C16/509;C23C16/54;C30B25/08;H01J37/32;(IPC1-7):H01L21/784 |
主分类号 |
C23C14/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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