发明名称 |
Method for fabricating MOS transistor |
摘要 |
A first conductive impurity ion is implanted into a semiconductor substrate to form a well area on which a gate electrode is formed. A first non-conductive impurity is implanted into the well area on both sides of the gate electrode to control a substrate defect therein and to form a first precipitate area to a first depth. A second conductive impurity ion is implanted into the well area on both sides of the gate electrode, so that a source/drain area is formed to a second depth being relatively shallower than the first depth. A second non-conductive impurity is implanted into the source/drain area so as to control a substrate defect therein and to form a second precipitate area. As a result, substrate defects such as dislocation, extended defect, and stacking fault are isolated from a P-N junction area, thereby forming a stable P-N junction.
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申请公布号 |
US6335233(B1) |
申请公布日期 |
2002.01.01 |
申请号 |
US19990347822 |
申请日期 |
1999.07.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO CHANG-HYUN;KOH GWAN-HYEOB;LEE MI-HYANG;HA DAE-WON |
分类号 |
H01L29/772;H01L21/265;H01L21/336;H01L21/8238;H01L27/092;H01L29/08;H01L29/10;H01L29/78;(IPC1-7):H01L21/823 |
主分类号 |
H01L29/772 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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