发明名称 |
Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD |
摘要 |
A method and apparatus are disclosed for depositing a dielectric film in a gap having an aspect ratio at least as large as 6:1. By cycling the gas chemistry of a high-density-plasma chemical-vapor-deposition system between deposition and etching conditions, the gap may be substantially 100% filled. Such filling is achieved by adjusting the flow rates of the precursor gases such that the deposition to sputtering ratio during the deposition phases is within certain predetermined limits.
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申请公布号 |
US6335288(B1) |
申请公布日期 |
2002.01.01 |
申请号 |
US20000648395 |
申请日期 |
2000.08.24 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
KWAN MICHAEL;LIU ERIC |
分类号 |
H01L21/205;C23C16/04;C23C16/44;C23C16/455;C23C16/517;C23C16/52;H01L21/3065;H01L21/316;H01L21/76;H01L21/8242;H01L27/108;(IPC1-7):H01L21/311;H01L21/469;C23C8/00 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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