| 摘要 |
A plurality of photomask pattern data are received at a time so as to carry out, with respect to an entire region of each photomask, correction for the optical proximity effect in a photoresist. Also, from the entire region of each photomask, an underlayer correction range which requires being corrected with respect to the optical proximity effect due to a base structure of the photoresist is automatically extracted so as to correct the photoresist within only the underlayer correction range. Further, from the entire region of each photomask, a development correction range which requires being corrected with respect to receding of edges and pattern deformation of the photoresist generated during development is automatically extracted so as to correct the photoresist within only the development correction range with respect to the development of the photoresist. As a result, it is possible to accurately and rapidly correct a photomask pattern for forming of a photoresist pattern. |
