| 摘要 |
The present invention provides a semiconductor substrate comprising a non-porous monocrystalline layer with decreased crystal defects which is formed on a porous silicon layer, and a method of producing the substrate. The method of producing the substrate comprises a heat treatment step of heat-treating a porous layer in an atmosphere not containing a silicon type gas, and a step of growing a non-porous monocrystalline silicon layer on the porous silicon layer, wherein the heat treatment step is executed such that the etched thickness of silicon is 2 nm or less and that the rate of change r for the Haze value of the porous silicon layer defined by (the Haze value after the heat treatment)/(the Haze value before the heat treatment) satisfies the relationship between 1<=r<=3.5. |
