发明名称 Electron microscopy sample having silicon nitride passivation layer
摘要 A transmission electron microscopy (TEM) or scanning electron microscopy (SEM) sample preparation method includes the steps of depositing a metal layer on top of a substrate, depositing a silicon nitride passivation layer on top of the metal layer, and cutting the substrate and the metal and passivation layers to expose their cross-sections for examination by electron microscopy. As a result, a TEM/SEM sample having sharp, well-defined boundaries is produced.
申请公布号 US6335533(B1) 申请公布日期 2002.01.01
申请号 US19980206674 申请日期 1998.12.07
申请人 ADVANCED MICRO DEVICES, INC. 发明人 MORALES GUARIONEX;HOPPER DAWN;YOU LU
分类号 G01N1/32;(IPC1-7):H01J37/00 主分类号 G01N1/32
代理机构 代理人
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