发明名称 |
Electron microscopy sample having silicon nitride passivation layer |
摘要 |
A transmission electron microscopy (TEM) or scanning electron microscopy (SEM) sample preparation method includes the steps of depositing a metal layer on top of a substrate, depositing a silicon nitride passivation layer on top of the metal layer, and cutting the substrate and the metal and passivation layers to expose their cross-sections for examination by electron microscopy. As a result, a TEM/SEM sample having sharp, well-defined boundaries is produced.
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申请公布号 |
US6335533(B1) |
申请公布日期 |
2002.01.01 |
申请号 |
US19980206674 |
申请日期 |
1998.12.07 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
MORALES GUARIONEX;HOPPER DAWN;YOU LU |
分类号 |
G01N1/32;(IPC1-7):H01J37/00 |
主分类号 |
G01N1/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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