| 发明名称 |
Method and design for the suppression of single event upset failures in digital circuits made from GaAs and related compounds |
| 摘要 |
Single event upset failure are suppressed in GaAs-based electronics by implanting the GaAs substrate with an appropriate dose of O and at least one of either Al, Cr, or In.
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| 申请公布号 |
US6335562(B1) |
申请公布日期 |
2002.01.01 |
| 申请号 |
US19990457521 |
申请日期 |
1999.12.09 |
| 申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY |
发明人 |
DIETRICH HARRY B.;KANG JIN U.;MOLNAR BELA;FRANKEL MICHAEL Y. |
| 分类号 |
H01L21/26;H01L21/265;H01L21/322;(IPC1-7):H01L23/58 |
主分类号 |
H01L21/26 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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