| 摘要 |
The present invention relates to a method of etching a semiconductor wafer (100), particularly of a compound semiconductor, in order to facilitate cleaving of devices (200) from the wafer (100) , and to devices (200) cleaved by such a method. A semiconductor device (200) is cleaved from a wafer (100) and comprises a substrate (106) and grown upon the substrate (106) one or more layers (108, 110, 112, 116, 122) , the cleaves (150, 151, 153, 154) thereby defining two pairs of parallel edges (201, 202; 203; 204) of the device (200). Each of the cleaves is guided by a groove (163, 164; 166, 266) etched through the grown layers (108, 110, 112, 116, 122) and partly into the substrate (106).
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