发明名称 |
PHOTORESIST POLYMER FOR TIPS AND PHOTORESIST COMPOSITION CONTAINING THE SAME |
摘要 |
A photoresist polymer for a top-surface imaging process by silylation (TIPS), and a photoresist composition comprising the same. The protecting group of the present photoresist polymer is selectively protected in an exposed region, and thus a hydroxyl group is generated. The hydroxyl group reacts with the silylation agent to cause a silylation process. Accordingly, when the photoresist film is dry-developed, the exposed region only remains to form a negative pattern. In addition, the present photoresist composition has excellent adhesiveness to a substrate, thus preventing a pattern collapse in forming a minute pattern. As a result, the present photoresist composition is suitable for a lithography process using light sources such as ArF (193 nm), VUV (157 nm) and EUV (13 nm). |
申请公布号 |
KR20010114070(A) |
申请公布日期 |
2001.12.29 |
申请号 |
KR20000034103 |
申请日期 |
2000.06.21 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
BAEK, GI HO;JUNG, JAE CHANG;JUNG, MIN HO;KO, CHA WON;LEE, GEUN SU |
分类号 |
C08F8/00;C08F8/14;C08F222/06;C08F232/00;C08F232/04;C08F232/08;C08K5/00;C08L35/00;G03F7/039;G03F7/26;G03F7/38;H01L21/027 |
主分类号 |
C08F8/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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