| 摘要 |
The method includes assembly of two semiconductor substrate layers with insulating layers, and cutting at appropriate planes in order to provide a thin layer silicon on insulate semiconductor. The method includes a first phase including (a) the formation on the upper part of a first semiconductor substrate of a first insulating layer above a cut plane of this substrate; (b) putting the first insulating substrate layer in contact with the upper part of a second initial substrate (5) in order to form a single insulating layer (3); (c) cutting at the level of the cut plane, in order to obtain an intermediate semiconductor substrate (1) on the single insulating layer. A second phase then includes formation, in the intermediate semiconductor substrate (1), of a supplementary insulating layer (9), jointing the single insulating layer (3), and covered by an upper layer of final semiconductor substrate. |
