METHOD FOR MANUFACTURING CAPACITOR HAVING DUAL STORAGE ELECTRODE,申请号KR20000033612-传众专利搜索

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发明名称	METHOD FOR MANUFACTURING CAPACITOR HAVING DUAL STORAGE ELECTRODE
摘要
申请公布号	KR20010113319(A)	申请公布日期	2001.12.28
申请号	KR20000033612	申请日期	2000.06.19
申请人	HYNIX SEMICONDUCTOR INC.	发明人	YOON, DONG SU
分类号	H01L27/108;(IPC1-7):H01L27/108	主分类号	H01L27/108
代理机构		代理人
主权项
地址

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