METHOD FOR FORMING FERROELECTRIC CAPACITOR TO PREVENT SHORT BETWEEN UPPER AND LOWER ELECTRODE,申请号KR20000033537-传众专利搜索

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发明名称	METHOD FOR FORMING FERROELECTRIC CAPACITOR TO PREVENT SHORT BETWEEN UPPER AND LOWER ELECTRODE
摘要
申请公布号	KR20010113271(A)	申请公布日期	2001.12.28
申请号	KR20000033537	申请日期	2000.06.19
申请人	HYNIX SEMICONDUCTOR INC.	发明人	KWON, SUN YONG
分类号	H01L27/105;(IPC1-7):H01L27/105	主分类号	H01L27/105
代理机构		代理人
主权项
地址

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