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发明名称
METHOD FOR FORMING STORAGE ELECTRODE OF HIGH DIELECTRIC CAPACITOR
摘要
申请公布号
KR20010113317(A)
申请公布日期
2001.12.28
申请号
KR20000033610
申请日期
2000.06.19
申请人
HYNIX SEMICONDUCTOR INC.
发明人
SHIN, HYEON SANG
分类号
H01L27/105;(IPC1-7):H01L27/105
主分类号
H01L27/105
代理机构
代理人
主权项
地址
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