| 发明名称 |
SILICIDE TARGET FOR DEPOSITING LESS EMBRITTLING GATE OXIDE AND METHOD OF MANUFACTURING SILICIDE TARGET |
| 摘要 |
The invention relates to a silicide target for depositing less embrittling gate oxide consisting of MSi0.8-1.2 (M: Zr, Hf) and provides a less enbrittling silicide target suitable for use to deposit ZrO2-SiO2 or HfO2-SiO2 film that can serve as a high-permittivity gate insulator having a property comparable to that of SiO2 film. A method of manufacture is also provided.
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| 申请公布号 |
WO0199176(A1) |
申请公布日期 |
2001.12.27 |
| 申请号 |
WO2001JP02410 |
申请日期 |
2001.03.23 |
| 申请人 |
NIKKO MATERIALS COMPANY, LIMITED;ODA, KUNIHIRO;MIYASHITA, HIROHITO |
发明人 |
ODA, KUNIHIRO;MIYASHITA, HIROHITO |
| 分类号 |
C23C14/08;C23C14/34;H01L21/203;H01L21/28;H01L21/31;H01L21/316;H01L29/51;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
C23C14/08 |
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