发明名称 |
REMOVABLE INORGANIC ANTI-REFLECTION COATING PROCESS |
摘要 |
In accordance with the present invention, a method for employing and removing inorganic anti-reflection coatings, includes the steps of providing a first dielectric layer (122) on a semiconductor device (110) structure to be processed, the first dielectric layer being selectively removable relative to the semiconductor device structure, and forming an inorganic dielectric anti-reflection coating (DARC) (124) on the first dielectric layer, the DARC being selectively removable relative to the first dielectric layer. A resist layer (130) is patterned on the DARC. The resist is selectively removable relative to the DARC. The semiconductor device structure is etched, and the resist layer, the DARC and the first dielectric layer are selectively removed. |
申请公布号 |
WO0199164(A2) |
申请公布日期 |
2001.12.27 |
申请号 |
WO2001US19660 |
申请日期 |
2001.06.20 |
申请人 |
INFINEON TECHNOLOGIES NORTH AMERICA CORP.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LEE, GILL YONG;HALLE, SCOTT D.;BEINTNER, JOCHEN |
分类号 |
G03F7/09;H01L21/027;H01L21/311;H01L21/314;H01L21/8242 |
主分类号 |
G03F7/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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