摘要 |
A semiconductor-based, photodetector device capable of simultaneously detecting two or more selected wavelengths of light on a pixel-registered basis. The device has detector layers (20, 40) of selected semiconductor materials of one micron or less in thickness interspersed with contact layers (10, 30, 50). Each detector layer (20, 40) having a different light absorption to wavelength response curve (LM1, LM2). All contact layers (10, 30, 50), including detector bias voltages, have electrical contacts (11, 31, 51) on the backside of the pixel for discrete pixel connection to mating connection on a suitable ROIC substrate (70). Among its several embodiments, there is a multi-color detector array and a single channel per pixel differential optical signal detector.
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申请人 |
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION, INC. |
发明人 |
FASKA, THOMAS;TAYLOR, MICHAEL;SUNDARAM, MANI;WILLIAMS, RICHARD |