| 发明名称 |
BARRIER LAYER BUFFING AFTER CU CMP |
| 摘要 |
Deposited Cu is initially removed by CMP with fixed abrasive polishing pads stopping on the barrier layer, e.g., Ta or TaN. Buffing is then conducted selectively with respect to Cu: Ta or TaN and Cu: silicon oxide to remove the barrier layer and control dishing to no greater than 100 Å.
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| 申请公布号 |
US2001055880(A1) |
申请公布日期 |
2001.12.27 |
| 申请号 |
US19990401643 |
申请日期 |
1999.09.22 |
| 申请人 |
LI SHIJIAN;REDECKER FRED C.;WHITE JOHN M.;EMAMI RAMIN;KO SEN-HOU |
发明人 |
LI SHIJIAN;REDECKER FRED C.;WHITE JOHN M.;EMAMI RAMIN;KO SEN-HOU |
| 分类号 |
B24B29/00;H01L21/304;H01L21/3205;H01L21/321;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
B24B29/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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