| 发明名称 |
Dry etching method |
| 摘要 |
In dry etching process wherein a substrate having a multi-layer film is etched, the etching process is monitored by determining a layer being processed. CHF3 gas is added to the processing gas during a period from the time when the lowermost layer on the substrate is etched until the etching is completed.
|
| 申请公布号 |
US2001055886(A1) |
申请公布日期 |
2001.12.27 |
| 申请号 |
US20010892023 |
申请日期 |
2001.06.26 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
TAKAGI KIYOHIKO;KIMURA TEIICHI;YANAGI YOSHIHIRO |
| 分类号 |
C23F4/00;H01L21/302;H01L21/3065;H01L21/3213;(IPC1-7):C23F1/00 |
主分类号 |
C23F4/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
