| 摘要 |
<p>The present invention provides a photoresist remover composition comprising 0.1 to 0.3 weight % of ammonium fluoride, 25 to 45 weight % of water, 4 to 15 weight % of an organic phenol based compound containing 2 or 3 hydroxyl groups, and 40 to 70 weight % of alkyl amide, which is used to remove photoresists in the manufacturing process of semiconductors such as large scale integration, very large scale integration, etc. A photoresist remover composition according to the present invention can easily and quickly remove photoresist films cured by hard baking, dry etching, and ashing processes, and side wall resist polymer formed from a lower metallic substrate after photoresists are reacted with etching and ashing gases in the above processes, and useful in removing side wall resist polymer from a lower metallic substrate, particularly aluminum, aluminum alloy, etc. Furthermore, a photoresist remover composition according to the present invention can minimize lower metallic substrate corrosion in the photoresist removing process and minimize corrosion against lower metallic substrates in the photoresist removing process, and it is particularly meritorious for minimizing corrosion against new lower metallic substrates which are applied to line producing very large scale integration semiconductors, over 64 mega DRAM classes.</p> |
