发明名称 MULTI-WAVELENGTH SEMICONDUCTOR LASERS
摘要 <p>A multi-wavelength semiconductor laser is formed by monolithically integrating a plurality of laser diodes (1, 2) with at least one isolator section (3) and a coupler (4), which couples the different emission wavelengths μ1, μ2 into one output port (5). The isolator section can be either a light absorptive type or wavelength selective type, including a Bragg grating type isolator or a photonic bandgap crystal type isolator. The coupler is preferably a Y-junction coupler, but can also be a multi-branch waveguide coupler or a waveguide directional coupler.</p>
申请公布号 WO2001099248(A1) 申请公布日期 2001.12.27
申请号 SG2001000124 申请日期 2001.06.20
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