发明名称 High voltage charge pump circuit
摘要 Charge pump circuits are described that transfer a voltage signal in an output stage without signal-level degradation. Where a voltage signal may cause damage to circuitry or semiconductor breakdown, at least one bypass technique is engaged to inhibit such damage or breakdown.
申请公布号 US2001054928(A1) 申请公布日期 2001.12.27
申请号 US20010922982 申请日期 2001.08.06
申请人 MICRON TECHNOLOGY, INC. 发明人 MECIER RICHARD A.;MERRITT TODD A.
分类号 H02M3/07;(IPC1-7):G05F1/10 主分类号 H02M3/07
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