发明名称 |
High voltage charge pump circuit |
摘要 |
Charge pump circuits are described that transfer a voltage signal in an output stage without signal-level degradation. Where a voltage signal may cause damage to circuitry or semiconductor breakdown, at least one bypass technique is engaged to inhibit such damage or breakdown.
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申请公布号 |
US2001054928(A1) |
申请公布日期 |
2001.12.27 |
申请号 |
US20010922982 |
申请日期 |
2001.08.06 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
MECIER RICHARD A.;MERRITT TODD A. |
分类号 |
H02M3/07;(IPC1-7):G05F1/10 |
主分类号 |
H02M3/07 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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