| 发明名称 |
Etching method |
| 摘要 |
The method deals with plasma-structuring by etching, in particular with the plasma-structuring of materials at high temperatures. The application of a chemical etching process at high temperatures is made possible by the prior deposition of a polyimide mask.
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| 申请公布号 |
US2001054599(A1) |
申请公布日期 |
2001.12.27 |
| 申请号 |
US20010861763 |
申请日期 |
2001.05.21 |
| 申请人 |
ENGELHARDT MANFRED;WEINRICH VOLKER;MAZURE-ESPEJO CARLOS |
发明人 |
ENGELHARDT MANFRED;WEINRICH VOLKER;MAZURE-ESPEJO CARLOS |
| 分类号 |
C23F4/00;H01L21/3213;(IPC1-7):C23F1/00 |
主分类号 |
C23F4/00 |
| 代理机构 |
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