发明名称 MAGNETIC MULTILAYER STRUCTURE WITH IMPROVED MAGNETIC FIELD RANGE
摘要 A robust GMR or TMR effect type multilayer structure comprising a free and a pinned ferromagnetic layer, with a wide magnetic field range is described, as required, for example in automotive applications. The improvement is obtained by using an odd number of non-adjacent ferromagnetic layers in an exchange-biased Artificial Anti-Ferromagnet as the pinned layer.
申请公布号 WO0199099(A2) 申请公布日期 2001.12.27
申请号 WO2001EP06648 申请日期 2001.06.12
申请人 KONINKLIJKE PHILIPS ELECTRONICS N.V. 发明人 LENSSEN, KARS-MICHIEL, H.;KUIPER, ANTONIUS, E., T.
分类号 G11B5/39;G01R33/09;H01F10/16;H01F10/30;H01F10/32;H01L21/8246;H01L27/105;H01L27/22;H01L43/08 主分类号 G11B5/39
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