METHOD OF REDUCING POST-DEVELOPMENT DEFECTS IN AND AROUND OPENINGS FORMED IN PHOTORESIST BY USE OF NON-PATTERNED EXPOSURE
摘要
In the exposure and development of available deep ultraviolet (DUV) sensitive photoresist it has been observed that following the standard prior art methods of exposure and development results in a high density of undesirable pieces of components of the photoresist material, Blob Defects, remaining on the semiconductor substrate (body). A method of exposing and developing the photoresist material which results in a reduced incidence of these Blob Defects consists of introducing a low level uniform flood exposure of light in addition to the commonly used exposure to patterned light, followed by standard development. The flood exposure is in the range of 5 to 50 % of the dose-to-clear for a non-patterned exposure.
申请公布号
WO0198836(A2)
申请公布日期
2001.12.27
申请号
WO2001US19814
申请日期
2001.06.21
申请人
INFINEON TECHNOLOGIES NORTH AMERICA CORP.;INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
LU, ZHIJIAN;THOMAS, ALAN;GUTMANN, ALOIS;CHEN, KUANG, JUNG;LAWSON, MARGARET