发明名称 CLEAN METHOD FOR RECESSED CONDUCTIVE BARRIERS
摘要 A method for cleaning an oxidized diffusion barrier layer, in accordance with the present invention, includes providing a conductive diffusion barrier layer (26) employed for preventing oxygen and metal diffusion therethrough and providing a wet chemical etchant (wet etch) including hydrofluoric acid. The diffusion barrier layer (26) is etched with the wet chemical etchant to remove oxides from the diffusion barrier layer such that by employing the wet chemical etchant linear electrical behavior is achieved through the diffusion barrier layer.
申请公布号 WO0199181(A2) 申请公布日期 2001.12.27
申请号 WO2001US19241 申请日期 2001.06.14
申请人 INFINEON TECHNOLOGIES NORTH AMERICA CORP.;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 RAMACHANDRAN, RAVIKUMAR;NAGEL, NICOLAS;PARKS, CHRISTOPHER
分类号 H01L21/02;H01L21/321;H01L21/3213;H01L21/768;H01L21/8242 主分类号 H01L21/02
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