ORIENTATION INDEPENDENT OXIDATION OF SILICON

摘要

A method for forming an oxide of substantially uniform thickness on at least two crystallographic planes of silicon, in accordance with the present invention, includes providing a substrate (step 100) where surfaces have at least two different crystallographic orientations of the silicon crystal (step 102). Atomic oxygen (O) is formed for oxidizing the surfaces (step 106). An oxide is formed (step 108) on the surfaces by reacting the atomic oxygen with the surfaces to simultaneously form a substantially uniform thickness of the oxide on the surfaces.