| 摘要 |
<p>A shower head (9) having a plurality of ejection holes for supplying an organic metal gas at uniform density to the surface of a substrate (10) and a plurality of ejection holes for supplying an oxidizing gas at uniform density to the same is provided in a reaction furnace (8) of an MOCVD system. A heater for heating the inside at a temperature higher than the thermal decomposition point of the organic metal gas but lower than the film forming temperature is provided in the vicinity of the substrate-side surface of the shower head (9).</p> |
