发明名称 |
METHOD FOR MAKING A SOI SEMICONDUCTOR SUBSTRATE WITH THIN ACTIVE SEMICONDUCTOR LAYER |
摘要 |
The invention concerns a method comprising: 1)a first phase including steps which consist in forming in the upper part of a first initial semiconductor substrate a first layer of insulating material above a sectional plane of said first substrate, contacting the first layer of insulating material with the insulating upper part of a second initial substrate, so as to form a single layer of insulating material, a break at the sectional plane, so as to obtain an intermediate semiconductor substrate on the single insulating material layer; then, 2) in a second phase which consists in forming in the intermediate semiconductor substrate an additional insulating material layer adjacent to the single insulating material and topped with an upper layer of a final semiconductor substrate. |
申请公布号 |
WO0199179(A1) |
申请公布日期 |
2001.12.27 |
申请号 |
WO2001FR01960 |
申请日期 |
2001.06.21 |
申请人 |
STMICROELECTRONICS SA;LE GOASCOZ, VINCENT;JAOUEN, HERVE |
发明人 |
LE GOASCOZ, VINCENT;JAOUEN, HERVE |
分类号 |
H01L21/265;H01L21/762 |
主分类号 |
H01L21/265 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|