SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF

摘要

A semiconductor device has the multilayer wiring structure that includes at least one insulating layer having a set of conducting parts of an area of 500 ñm<2> or greater and a width of 1.0 ñm or narrower. A method of manufacturing such a semiconductor device comprises a chemical and mechanical polishing step for smoothing the surface of the insulating layer (501), a washing step for washing the smoothed surface of the insulating layer with chemical solution (502), and a rinsing step for removing the chemical solution (503). The rinsing step uses water containing dissolved oxygen less than 6 ppm by weight.