| 摘要 |
A semiconductor integrated circuit enables a drive circuit and a reception circuit to be constituted. The drive circuit drives long wiring in high speed while achieving realization of reduced area when large capacity of load is driven. The reception circuit receives this signal in high speed. There is provided an inverter within the drive circuit. An n-type MOS transistor is adopted as drive transistor. Drive power of the n-type MOS transistor is larger than that of a p-type MOS transistor. It is capable of driving signal with large load in long wiring such as bus line. Thus the drive circuit is realized in that the drive circuit drives the long wiring in high speed while achieving realization of reduced area. Further, it is capable of realizing a reception circuit suppressing through-current during the time period when the signal is changed.
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