发明名称 |
THIN-FILM TRANSISTOR AND METHOD OF MANUFACTURE THEREOF |
摘要 |
A thin-film transistor is provided which prevents the degradation of transistor characteristics due to ion channeling. A thin-film transistor (10) comprises thin crystalline silicon (2) including source and drain regions (2a) and a channel region (2b), which are formed on a substrate (1); a gate insulator (3) formed on the crystalline silicon (2); and a gate electrode (4) formed on the gate insulator (3). The gate electrode (4) includes an amorphous layer (5) and a crystalline layer (6). |
申请公布号 |
WO0199199(A1) |
申请公布日期 |
2001.12.27 |
申请号 |
WO2001JP04402 |
申请日期 |
2001.05.25 |
申请人 |
NEC CORPORATION;TANABE, HIROSHI |
发明人 |
TANABE, HIROSHI |
分类号 |
H01L21/28;H01L21/20;H01L21/336;H01L29/423;H01L29/43;H01L29/49;H01L29/786;(IPC1-7):H01L29/786;H01L21/265 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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