发明名称 |
MASK, AND PATTERN FORMING METHOD USING THE SAME |
摘要 |
<p>PROBLEM TO BE SOLVED: To simplify pattern data as well as to form a narrow pattern beyond the conventional resolving power and to form a fine pattern with enhanced resolution, in relation to a mask and a pattern forming method using the mask. SOLUTION: In the mask comprising a transparent substrate layer which is transparent to light used for exposure and an opaque layer formed on the transparent substrate layer, at least a part of the mask pattern comprises the opaque layer and a phase shift layer disposed only one the edge part of the opaque layer, and a prescribed phase shift is caused between the phase of light passing through the phase shift layer and that of light passing through a shift layer-free part, and the phase shift layer surrounds the periphery of the disclosed part of the transparent substrate layer except the phase shift layer.</p> |
申请公布号 |
JP2001356468(A) |
申请公布日期 |
2001.12.26 |
申请号 |
JP20010167077 |
申请日期 |
2001.06.01 |
申请人 |
FUJITSU LTD |
发明人 |
KAWABATA TOSHIAKI;NAKAGAWA KENJI;YAMAGUCHI SEIICHIRO;TAGUCHI MASAO;SUMI KAZUHIKO;YAGISHITA YUICHIRO |
分类号 |
G03F1/29;G03F1/32;G03F1/34;G03F1/68;G03F1/70;G03F7/20;H01L21/027;(IPC1-7):G03F1/08 |
主分类号 |
G03F1/29 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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