发明名称 MASK, AND PATTERN FORMING METHOD USING THE SAME
摘要 <p>PROBLEM TO BE SOLVED: To simplify pattern data as well as to form a narrow pattern beyond the conventional resolving power and to form a fine pattern with enhanced resolution, in relation to a mask and a pattern forming method using the mask. SOLUTION: In the mask comprising a transparent substrate layer which is transparent to light used for exposure and an opaque layer formed on the transparent substrate layer, at least a part of the mask pattern comprises the opaque layer and a phase shift layer disposed only one the edge part of the opaque layer, and a prescribed phase shift is caused between the phase of light passing through the phase shift layer and that of light passing through a shift layer-free part, and the phase shift layer surrounds the periphery of the disclosed part of the transparent substrate layer except the phase shift layer.</p>
申请公布号 JP2001356468(A) 申请公布日期 2001.12.26
申请号 JP20010167077 申请日期 2001.06.01
申请人 FUJITSU LTD 发明人 KAWABATA TOSHIAKI;NAKAGAWA KENJI;YAMAGUCHI SEIICHIRO;TAGUCHI MASAO;SUMI KAZUHIKO;YAGISHITA YUICHIRO
分类号 G03F1/29;G03F1/32;G03F1/34;G03F1/68;G03F1/70;G03F7/20;H01L21/027;(IPC1-7):G03F1/08 主分类号 G03F1/29
代理机构 代理人
主权项
地址