| 摘要 |
PROBLEM TO BE SOLVED: To surely enhance a density of a semiconductor device by suitably simplifying a wiring configuration in the device. SOLUTION: The semiconductor device is constituted by wiring as prescribed at a base array for an embedded cell array/gate array having one constituting unit U including a P-type transistor P1, an N-type transistor N3 disposed as a pair with the transistor P1, a P-type transistor P2 aligned with the transistor P1 to form a P-type transistor row together with the transistor P1, and an N-type transistor N4 disposed as a pair with the transistor P2 to form an N-type transistor row parallel to the P-type transistor row together with the transistor N3 parallel to the transistor N3. The device also comprises a cross gate structure in which a gate wiring part 5 is bonded to a wiring member 6 so that gates of the transistors P1 and N4 are crossed with gates of the transistors P2 and N3 each other.
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