| 摘要 |
PROBLEM TO BE SOLVED: To provide an SRAM allowing the memory cell to be miniaturized and the optical proximity effect to be corrected. SOLUTION: First layers being gate electrode layers 21a, 21b, second layers being drain-to-drain connecting layers 31a, 31b and third layers being drain-to- gate connecting layers 41a, 41b form a conductive layer for flip flops. Source contact layers 61b of load transistors Q5, Q6 locate near the ends 21a2, 21b2 of the gate electrodes 21a, 21b and the ends 21a2, 21b2 are bent outward to avoid contacting with the source contact layers 61b. |
