| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for manufacturing a substrate for a semiconductor device in which a plating lead for plating a bonding pad on an insulating substrate with nickel and gold by electrolytic plating is removed by etching. SOLUTION: The substrate for a semiconductor device is manufactured as follows: a wiring pattern 12, a bonding pad 13, a plating lead 14, a land 17, a via hole 18 and a ball pad 16 are formed on both surfaces of an insulating substrate 11. A solder resist 19 is formed in a region except for the plating lead 14. A lead protecting resist 22 is formed in a region of the plating lead 14. A nickel and gold film of a desired thickness is formed on the bonding pad 13 and the ball pad 16 by electrolytic plating. The protecting resist 22 is peeled away and then the plating lead 14 is etched away. A protecting film 23 and the solder resist 19 are subject to stripping, and the outside of the substrate is cut in a desired size.</p> |
