CONTACT STRUCTURE FOR WIRINGS AND ITS FORMING METHOD, THIN-FILM TRANSISTOR SUBSTRATE INCLUDING THE SAME AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a contact structure for wirings which is made of a low-resistance substance and at the same time has a low-resistance contact characteristic, and to provide a method for forming the structure. SOLUTION: In the contact structure for wirings and its forming method, after laminating an aluminum-based conductive substance on a substrate, it is patterned to form each lateral gate wiring on the substrate. Then, after forming a gate insulation film by laminating on each gate wiring silicon nitride within a temperature range not lower than 300 deg.C and during a term not shorter than 5 minutes, each semiconductor layer and resistive contact layers are formed successively on the gate insulation film. Thereafter, by laminating thereon such a metal as chrome and pattering it, data wirings intersecting each gate wiring are formed. Then, after laminating a protective film thereon and patterning it, contact holes are so formed in the protective film as to expose respectively to the external of the surfaces of each drain electrode, each gate pad, and each data pad. Thereafter, by laminating IZO thereon and patterning it, there are formed each picture-element electrode, each auxiliary gate pad, and each auxiliary data pad which are connected electrically and respectively with each drain electrode, each gate pad, and each data pad.