发明名称 CHEMICAL VAPOR GROWTH DEVICE AND METHOD
摘要 PROBLEM TO BE SOLVED: To enable the inner temperature of a reaction chamber to be accurately controlled. SOLUTION: An open/close timing providing part 53 detects the angle of rotation of a mounting pad 22, and a detection result is sent to an open/close control part 52. The open/close control part 52 judges whether the detection spot of an infrared detecting means 28 is located on a semiconductor wafer 23 or not, resting on a correlation between the previously stored angle of rotation of the mounting pad 22 and the position of the detection spot of an infrared detection means 28. When the open/close control part 52 judges that the detection spot is located on the semiconductor wafer 23, the entrance of a mounting hole 34 of a reactor chamber 21 is opened by a chopper 51 (detection process), and when the open/close control part 52 judges that the detection spot is located in a forbidden range or the mounting pad 22, the mounting hole 34 is closed (forbidding process). As mentioned above, detection and forbidding are alternately and intermittently repeated, synchronizing with the rotation of the mounting pad 22. By this setup, only infrared rays radiating from the semiconductor wafer 23 are made to impinge on the infrared detection means 28.
申请公布号 JP2001358083(A) 申请公布日期 2001.12.26
申请号 JP20010129255 申请日期 2001.04.26
申请人 MITSUBISHI ELECTRIC CORP 发明人 OKURA YUJI;SENBA SHINJI
分类号 C23C16/52;H01L21/205;(IPC1-7):H01L21/205 主分类号 C23C16/52
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