| 摘要 |
PROBLEM TO BE SOLVED: To improve information holding performance for a long term by nonvolatile memory transistors connected in a statically latched state. SOLUTION: A nonvolatile memory has a nonvolatile memory circuit (101) having a pair of series circuits each of a load and the nonvolatile memory transistor and connected in the statically latched state, a program control circuit (102) for storing information in the nonvolatile memory circuit, a volatile latched circuit (104) capable of being latched with memory information of the nonvolatile memory circuit, and a read control circuit (103) for latching memory information of the nonvolatile memory circuit to the volatile latched circuit. The read control circuit supplies an operating power of a statically latching operation to the nonvolatile memory circuit in response to an instruction of a reading operation, and disconnects the supply of the power after the latching operation is completed. Thus, a period in which the nonvolatile memory transistor is exposed with a voltage state for bringing about a useless charge gain or a charge loss is shortened. |
