| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing process which is superior in micro workability and gives few damages to a device. SOLUTION: In the process, an electronic negative gas is introduced to a chamber, and in addition, a positive bias voltage is impressed from a DC pulse power source upon a sample stage, when a prescribed delay time Td elapses, after the plasma generating high-frequency pulse power impressed upon a coil from a high-frequency pulse power source is turned off. Since electron attachment and detachment are apt to occur, after the plasma generating high-frequency pulse power is turned off, the density of electrons is decreased abruptly, and at the same time, anions are abruptly increased. The delay time Td is set, so that Nn/Ne (where Nn and Ne respectively denote the density Nn of anions and density of electrons) may become about 500 or larger. |
