发明名称 PLASMA PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a plasma processing apparatus which can precisely detect the service life of a microwave-transmitting member composed of quartz glass. SOLUTION: This plasma processing apparatus processes an object to be processed W in a processing chamber 2 maintained in a vacuum atmosphere, by utilizing a plasma generated by having a process gas containing at least fluorine atoms, irradiated with microwaves. The treatment device has a microwave-transmitting member 5, composed of quartz glass for introducing the microwave to the plasma-generating region, a photodetecting means 8 which detects the SiF light emitted, when the member 5 is etched by means of the plasma, and a monitoring means 11 having a function of integrating the luminous intensity of the SiF light detected by means of the photodetecting means 8.
申请公布号 JP2001358126(A) 申请公布日期 2001.12.26
申请号 JP20000178493 申请日期 2000.06.14
申请人 SHIBAURA MECHATRONICS CORP 发明人 MUTO MAKOTO
分类号 H05H1/00;C23F4/00;H01L21/302;H01L21/3065;H05H1/46 主分类号 H05H1/00
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